Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors
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Abstract
In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2V-1s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors</title><author><name sortKey="Wahl, Richard E" uniqKey="Wahl R">Richard E. Wahl</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Flexible Display Center, Arizona State University</s1><s2>Tempe, AZ 85287</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287</wicri:noRegion></affiliation></author><author><name>FENGYUN WANG</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Materials Science, City University of Hong Kong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Chung, Hugh E" uniqKey="Chung H">Hugh E. Chung</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Flexible Display Center, Arizona State University</s1><s2>Tempe, AZ 85287</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287</wicri:noRegion></affiliation></author><author><name sortKey="Kunnen, George R" uniqKey="Kunnen G">George R. Kunnen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Flexible Display Center, Arizona State University</s1><s2>Tempe, AZ 85287</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287</wicri:noRegion></affiliation></author><author><name sortKey="Yip, Senpo" uniqKey="Yip S">Senpo Yip</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Materials Science, City University of Hong Kong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Edward H" uniqKey="Lee E">Edward H. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Flexible Display Center, Arizona State University</s1><s2>Tempe, AZ 85287</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287</wicri:noRegion></affiliation></author><author><name sortKey="Pun, Edwin Y B" uniqKey="Pun E">Edwin Y. B. Pun</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, City University of Hong Kong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Raupp, Gregory B" uniqKey="Raupp G">Gregory B. Raupp</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, City University of Hong Kong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author><author><name sortKey="Allee, David R" uniqKey="Allee D">David R. Allee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Flexible Display Center, Arizona State University</s1><s2>Tempe, AZ 85287</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287</wicri:noRegion></affiliation></author><author><name sortKey="Ho, Johnny C" uniqKey="Ho J">Johnny C. Ho</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Materials Science, City University of Hong Kong</s1><s2>Kowloon</s2><s3>HKG</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0227068</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0227068 INIST</idno><idno type="RBID">Pascal:13-0227068</idno><idno type="wicri:Area/Main/Corpus">000B32</idno><idno type="wicri:Area/Main/Repository">000503</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>1/f noise</term><term>Direct current</term><term>Drain current</term><term>Electrical characteristic</term><term>Indium arsenides</term><term>Nanowires</term><term>Thin film transistor</term><term>Voltage threshold</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Bruit basse fréquence</term><term>Transistor couche mince</term><term>Courant continu</term><term>Caractéristique électrique</term><term>Seuil tension</term><term>Courant drain</term><term>Semiconducteur type n</term><term>Arséniure d'indium</term><term>Nanofil</term><term>8107V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors</s1></fA08><fA11 i1="01" i2="1"><s1>WAHL (Richard E.)</s1></fA11><fA11 i1="02" i2="1"><s1>FENGYUN WANG</s1></fA11><fA11 i1="03" i2="1"><s1>CHUNG (Hugh E.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUNNEN (George R.)</s1></fA11><fA11 i1="05" i2="1"><s1>YIP (Senpo)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (Edward H.)</s1></fA11><fA11 i1="07" i2="1"><s1>PUN (Edwin Y. 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All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0227068</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. 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